IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Infineon |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket/koffer: | TO-252-3 |
| Transistor polariteit: | N-kanaal |
| Oantal kanalen: | 1 kanaal |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Id - Continuous Drain Current: | 50 A |
| Rds On - Drain-Source Resistance: | 9,3m omt |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 18,2 nC |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 175 C |
| Pd - Power Dissipation: | 41 W |
| Kanaalmodus: | Ferbettering |
| Kwalifikaasje: | AEC-Q101 |
| Hannelsnamme: | OptiMOS |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Merk: | Infineon Technologies |
| Konfiguraasje: | Inkel |
| Fall Tiid: | 5 ns |
| Hichte: | 2,3 mm |
| Lingte: | 6,5 mm |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 7 ns |
| Searje: | OptiMOS-T2 |
| Factory Pack Quantity: | 2500 |
| Subkategory: | MOSFETs |
| Transistor type: | 1 N-kanaal |
| Typyske tiid foar útskeakeljen: | 4 ns |
| Typyske fertragingstiid foar oanset: | 5 ns |
| Breedte: | 6,22 mm |
| Diel # Aliassen: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Unit Gewicht: | 330 mg |
• N-kanaal - Enhancement modus
• AEC kwalifisearre
• MSL1 oant 260 ° C peak reflow
• 175 ° C wurktemperatuer
• Grien produkt (konform RoHS)
• 100% Avalanche hifke
