IXFA22N65X2 MOSFET 650V/22A Ultra Junction X2
♠ Produktbeskriuwing
Produkt Attribute | Attribute Wearde |
Fabrikant: | IXYS |
Produkt Kategory: | MOSFET |
Technology: | Si |
Montage styl: | SMD/SMT |
Pakket / saak: | TO-263-3 |
Transistor polariteit: | N-kanaal |
Oantal kanalen: | 1 kanaal |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 22 A |
Rds On - Drain-Source Resistance: | 160 mOhm |
Vgs - Gate-boarne spanning: | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
Qg - Gate Charge: | 38 nc |
Minimum wurktemperatuer: | - 55 C |
Maksimum wurktemperatuer: | + 150 C |
Pd - Power Dissipation: | 360 W |
Kanaalmodus: | Ferbettering |
Hannelsnamme: | HiPerFET |
Ferpakking: | Tube |
Merk: | IXYS |
Konfiguraasje: | Inkel |
Fall Tiid: | 10 ns |
Forward Transconductance - Min: | 8 S |
Produkt Type: | MOSFET |
Tiid om op te stean: | 35 ns |
Searje: | 650V Ultra Junction X2 |
Factory Pack Quantity: | 50 |
Subkategory: | MOSFETs |
Typyske tiid foar útskeakeljen: | 33 ns |
Typyske fertragingstiid foar oanset: | 38 ns |
Unit Gewicht: | 0.139332 oz |