NTZD3154NT1G MOSFET 20V 540mA Dual N-kanaal w/ESD
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | onsemi |
| Produkt Kategory: | MOSFET |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket / saak: | SOT-563-6 |
| Transistor polariteit: | N-kanaal |
| Oantal kanalen: | 2 Kanaal |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 570 mA |
| Rds On - Drain-Source Resistance: | 550 mOhm, 550 mOhm |
| Vgs - Gate-boarne spanning: | - 7 V, + 7 V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Qg - Gate Charge: | 1,5 nC |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 280 mW |
| Kanaalmodus: | Ferbettering |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | onsemi |
| Konfiguraasje: | Dual |
| Fall Tiid: | 8 ns,8 ns |
| Forward Transconductance - Min: | 1 S, 1 S |
| Hichte: | 0,55 mm |
| Lingte: | 1,6 mm |
| Produkt: | MOSFET Lyts sinjaal |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 4 ns, 4 ns |
| Searje: | NTZD3154N |
| Factory Pack Quantity: | 4000 |
| Subkategory: | MOSFETs |
| Transistor type: | 2 N-kanaal |
| Typyske tiid foar útskeakeljen: | 16 ns, 16 ns |
| Typyske fertragingstiid foar oanset: | 6 ns,6 ns |
| Breedte: | 1,2 mm |
| Unit Gewicht: | 0.000106 oz |
• Low RDS (on) Ferbetterjen fan systeem effisjinsje
• Low Threshold Voltage
• Lytse Footprint 1,6 x 1,6 mm
• ESD Protected Gate
• Dizze apparaten binne Pb−Free, Halogen Free/BFR Free en binne RoHS-kompatibel
• Load / Power Switches
• Power Supply Converter Circuits
• Batterij Management
• Cell Phones, Digital Cameras, PDAs, Pagers, ensfh.
