SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket/koffer: | SC-89-6 |
| Transistor polariteit: | N-kanaal, P-kanaal |
| Oantal kanalen: | 2 Kanaal |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 500 mA |
| Rds On - Drain-Source Resistance: | 1,4 Ohm, 4 Ohm |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 750 pC, 1,7 nC |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 280 mW |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Dual |
| Forward Transconductance - Min: | 200 mS, 100 mS |
| Hichte: | 0,6 mm |
| Lingte: | 1,66 mm |
| Produkt Type: | MOSFET |
| Searje: | SI1 |
| Factory Pack Quantity: | 3000 |
| Subkategory: | MOSFETs |
| Transistor type: | 1 N-kanaal, 1 P-kanaal |
| Typyske tiid foar útskeakeljen: | 20 ns, 35 ns |
| Typyske fertragingstiid foar oanset: | 15 ns, 20 ns |
| Breedte: | 1,2 mm |
| Diel # Aliassen: | SI1029X-GE3 |
| Unit Gewicht: | 32 mg |
• Halogen-frij Neffens IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Hiel lyts foetôfdruk
• High-Side Switching
• Leech op-resistinsje:
N-kanaal, 1,40 Ω
P-kanaal, 4 Ω
• Lege drompel: ± 2 V (typ.)
• Snelle wikselsnelheid: 15 ns (typ.)
• Gate-Source ESD beskerme: 2000 V
• Compliant to RoHS-rjochtline 2002/95 / EC
• Ferfange Digital Transistor, Level-Shifter
• Batterij eksploitearre systemen
• Power Supply Converter Circuits
