SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket / saak: | SOT-23-3 |
| Transistor polariteit: | P-kanaal |
| Oantal kanalen: | 1 kanaal |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Id - Continuous Drain Current: | 5.8 A |
| Rds On - Drain-Source Resistance: | 35 mOhm |
| Vgs - Gate-boarne spanning: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 12 nc |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 1.7 W |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Inkel |
| Fall Tiid: | 10 ns |
| Hichte: | 1,45 mm |
| Lingte: | 2,9 mm |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 20 ns |
| Searje: | SI2 |
| Factory Pack Quantity: | 3000 |
| Subkategory: | MOSFETs |
| Transistor type: | 1 P-kanaal |
| Typyske tiid foar útskeakeljen: | 40 ns |
| Typyske fertragingstiid foar oanset: | 20 ns |
| Breedte: | 1,6 mm |
| Diel # Aliassen: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Unit Gewicht: | 0.000282 oz |
• Halogen-frij Neffens IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100% Rg Tested
• Compliant to RoHS-rjochtline 2002/95 / EC
• Load Switch foar draachbere apparaten
• DC / DC Converter
