SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket / saak: | TSOP-6 |
| Transistor polariteit: | P-kanaal |
| Oantal kanalen: | 1 kanaal |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 8 A |
| Rds On - Drain-Source Resistance: | 36 omt |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 50 nc |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 4.2 W |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Searje: | SI3 |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Inkel |
| Hichte: | 1,1 mm |
| Lingte: | 3,05 mm |
| Produkt Type: | MOSFET |
| Factory Pack Quantity: | 3000 |
| Subkategory: | MOSFETs |
| Breedte: | 1,65 mm |
| Unit Gewicht: | 0.000705 oz |
• TrenchFET® Power MOSFET
• 100% Rg en UIS Tested
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