SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket/koffer: | PowerPAK-1212-8 |
| Transistor polariteit: | P-kanaal |
| Oantal kanalen: | 1 kanaal |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 3.8 A |
| Rds On - Drain-Source Resistance: | 1,05 ohm |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 25 nc |
| Minimum wurktemperatuer: | - 50 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 52 W |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Inkel |
| Fall Tiid: | 12 ns |
| Forward Transconductance - Min: | 4 S |
| Hichte: | 1,04 mm |
| Lingte: | 3,3 mm |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 11 ns |
| Searje: | SI7 |
| Factory Pack Quantity: | 3000 |
| Subkategory: | MOSFETs |
| Transistor type: | 1 P-kanaal |
| Typyske tiid foar útskeakeljen: | 27 ns |
| Typyske fertragingstiid foar oanset: | 9 ns |
| Breedte: | 3,3 mm |
| Diel # Aliassen: | SI7119DN-GE3 |
| Unit Gewicht: | 1 g |
• Halogen-frij Neffens IEC 61249-2-21 Beskikber
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package mei lytse grutte en Low 1,07 mm Profile
• 100% UIS en Rg Tested
• Aktive Clamp yn Intermediate DC / DC Power Supplies
