SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8
♠ Produktbeskriuwing
Produkt Attribute | Attribute Wearde |
Fabrikant: | Vishay |
Produkt Kategory: | MOSFET |
RoHS: | Details |
Technology: | Si |
Montage styl: | SMD/SMT |
Pakket/koffer: | SOIC-8 |
Transistor polariteit: | P-kanaal |
Oantal kanalen: | 1 kanaal |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 5.7 A |
Rds On - Drain-Source Resistance: | 42m omt |
Vgs - Gate-boarne spanning: | - 10 V, + 10 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Qg - Gate Charge: | 24 nc |
Minimum wurktemperatuer: | - 55 C |
Maksimum wurktemperatuer: | + 150 C |
Pd - Power Dissipation: | 2,5 W |
Kanaalmodus: | Ferbettering |
Hannelsnamme: | TrenchFET |
Ferpakking: | Reel |
Ferpakking: | Tape snije |
Ferpakking: | MouseReel |
Merk: | Vishay Semiconductors |
Konfiguraasje: | Inkel |
Fall Tiid: | 30 ns |
Forward Transconductance - Min: | 13 S |
Produkt Type: | MOSFET |
Tiid om op te stean: | 42 ns |
Searje: | SI9 |
Factory Pack Quantity: | 2500 |
Subkategory: | MOSFETs |
Transistor type: | 1 P-kanaal |
Typyske tiid foar útskeakeljen: | 30 ns |
Typyske fertragingstiid foar oanset: | 14 ns |
Diel # Aliassen: | SI9435BDY-E3 |
Unit Gewicht: | 750 mg |
• TrenchFET® macht MOSFETs
• Low termyske ferset PowerPAK® pakket mei lege 1,07 mm profileEC