SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket/koffer: | SOIC-8 |
| Transistor polariteit: | N-kanaal |
| Oantal kanalen: | 2 Kanaal |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 5.3 A |
| Rds On - Drain-Source Resistance: | 58m omt |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 13 nc |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 150 C |
| Pd - Power Dissipation: | 3.1 W |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Dual |
| Fall Tiid: | 10 ns |
| Forward Transconductance - Min: | 15 S |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 15 ns, 65 ns |
| Searje: | SI9 |
| Factory Pack Quantity: | 2500 |
| Subkategory: | MOSFETs |
| Transistor type: | 2 N-kanaal |
| Typyske tiid foar útskeakeljen: | 10 ns, 15 ns |
| Typyske fertragingstiid foar oanset: | 15 ns, 20 ns |
| Diel # Aliassen: | SI9945BDY-GE3 |
| Unit Gewicht: | 750 mg |
• TrenchFET® macht MOSFET
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• Load switch
