SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V
♠ Produktbeskriuwing
Produkt Attribute | Attribute Wearde |
Fabrikant: | Vishay |
Produkt Kategory: | MOSFET |
Technology: | Si |
Montage styl: | SMD/SMT |
Pakket / saak: | TO-252-3 |
Transistor polariteit: | P-kanaal |
Oantal kanalen: | 1 kanaal |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Id - Continuous Drain Current: | 50 A |
Rds On - Drain-Source Resistance: | 60 mOhm |
Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 40 nc |
Minimum wurktemperatuer: | - 55 C |
Maksimum wurktemperatuer: | + 150 C |
Pd - Power Dissipation: | 113 W |
Kanaalmodus: | Ferbettering |
Hannelsnamme: | TrenchFET |
Ferpakking: | Reel |
Ferpakking: | Tape snije |
Ferpakking: | MouseReel |
Merk: | Vishay Semiconductors |
Konfiguraasje: | Inkel |
Fall Tiid: | 30 ns |
Forward Transconductance - Min: | 22 S |
Produkt Type: | MOSFET |
Tiid om op te stean: | 9 ns |
Searje: | SUD |
Factory Pack Quantity: | 2000 |
Subkategory: | MOSFETs |
Transistor type: | 1 P-kanaal |
Typyske tiid foar útskeakeljen: | 65 ns |
Typyske fertragingstiid foar oanset: | 8 ns |
Diel # Aliassen: | SUD19P06-60-BE3 |
Unit Gewicht: | 0.011640 oz |
• Halogen-frij Neffens IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100% UIS Tested
• Compliant to RoHS-rjochtline 2002/95 / EC
• High Side Switch foar Full Bridge Converter
• DC / DC Converter foar LCD Display