SQJ951EP-T1_GE3 MOSFET Dual P-Channel 30V AEC-Q101 Qualified
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket / saak: | PowerPAK-SO-8-4 |
| Transistor polariteit: | P-kanaal |
| Oantal kanalen: | 2 Kanaal |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 30 A |
| Rds On - Drain-Source Resistance: | 14 mOhm |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2,5 V |
| Qg - Gate Charge: | 50 nc |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 175 C |
| Pd - Power Dissipation: | 56 W |
| Kanaalmodus: | Ferbettering |
| Kwalifikaasje: | AEC-Q101 |
| Hannelsnamme: | TrenchFET |
| Ferpakking: | Reel |
| Ferpakking: | Tape snije |
| Ferpakking: | MouseReel |
| Merk: | Vishay Semiconductors |
| Konfiguraasje: | Dual |
| Fall Tiid: | 28 ns |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 12 ns |
| Searje: | SQ |
| Factory Pack Quantity: | 3000 |
| Subkategory: | MOSFETs |
| Transistor type: | 2 P-kanaal |
| Typyske tiid foar útskeakeljen: | 39 ns |
| Typyske fertragingstiid foar oanset: | 12 ns |
| Diel # Aliassen: | SQJ951EP-T1_BE3 |
| Unit Gewicht: | 0.017870 oz |
• Halogen-frij Neffens IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100% Rg en UIS Tested
• Compliant to RoHS-rjochtline 2002/95 / EC
