SQM50034EL_GE3 MOSFET N-KANAAL 60-V (DS) 175C MOSFET
♠ Produktbeskriuwing
| Produkt Attribute | Attribute Wearde |
| Fabrikant: | Vishay |
| Produkt Kategory: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Montage styl: | SMD/SMT |
| Pakket / saak: | TO-263-3 |
| Transistor polariteit: | N-kanaal |
| Oantal kanalen: | 1 kanaal |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 100 A |
| Rds On - Drain-Source Resistance: | 3,2 mOhm |
| Vgs - Gate-boarne spanning: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 60 nc |
| Minimum wurktemperatuer: | - 55 C |
| Maksimum wurktemperatuer: | + 175 C |
| Pd - Power Dissipation: | 150 W |
| Kanaalmodus: | Ferbettering |
| Hannelsnamme: | TrenchFET |
| Merk: | Vishay / Siliconix |
| Konfiguraasje: | Inkel |
| Fall Tiid: | 7 ns |
| Produkt Type: | MOSFET |
| Tiid om op te stean: | 7 ns |
| Searje: | SQ |
| Factory Pack Quantity: | 800 |
| Subkategory: | MOSFETs |
| Typyske tiid foar útskeakeljen: | 33 ns |
| Typyske fertragingstiid foar oanset: | 15 ns |
| Unit Gewicht: | 0.139332 oz |
• TrenchFET® macht MOSFET
• Pakket mei lege termyske ferset
• 100% Rg en UIS hifke
• AEC-Q101 kwalifisearre
